Park, J.S. Lee, S. Ju, B.K. Oh, M.H. Jang, J. Jeon, D. 2024-01-21T14:44:13Z 2024-01-21T14:44:13Z 2021-09-02 1999-12 1071-0922 https://pubs.kist.re.kr/handle/201004/141822 Metal silicide on silicon-tip field-emission arrays (FEAs) seems to be a promising way to improve the performance of the silicon-tip FEAs. The niobium-silicide layer was formed on a silicon surface. The Nb-silicide FEAs were prepared by a silicidation process. The formation of the Nb-silicide layer on a silicon surface was confirmed by using X-ray diffractometry (XRD). The current-voltage characteristics and the current fluctuation were measured under an ultra-high-vacuum environment using a Kiethley SMU 237 meter. The turn-on voltage of silicon-tip FEAs was decreased from 64 to 47 V by the formation of the Nb-silicide layer on silicon tips, and the emission current fluctuation (2%) was more stable than that of conventional silicon-tip FEAs. English SID, Santa Ana Current voltage characteristics Niobium compounds Silicon X ray diffraction analysis Silicon-tip field emission arrays (FEA) Field emission cathodes Improvement of field-emission properties by formation of Nb-silicide layer on silicon-tip FEAs Article 10.1889/1.1985287 1 Journal of the Society for Information Display, v.7, no.4, pp.241 - 243 Journal of the Society for Information Display 7 4 241 243 scopus 2-s2.0-0033295291 Article Current voltage characteristics Niobium compounds Silicon X ray diffraction analysis Silicon-tip field emission arrays (FEA) Field emission cathodes FED