Chae, KH Son, JH Chang, GS Kim, HB Jeong, JY Im, S Song, JH Kim, KJ Kim, HK Whang, CN 2024-01-21T15:01:22Z 2024-01-21T15:01:22Z 2021-09-05 1999-11 0965-9773 https://pubs.kist.re.kr/handle/201004/141869 Visible photoluminescence from silicon nanocrystals embedded in SiO2 matrix by ion beam mixing was investigated. Photoluminescence spectra of ion beam mixed SiO2/Si/SiO2 films excited by an Ar-laser (457.9 nm) showed more intense luminescence with a peak centered at 720 nm than that prepared by the conventional ion implantation method. The formation of nanocrystals in SiO2 matrix was confirmed by cross-sectional high resolution transmission electron microscopy. The red luminescence is attributed to the silicon nanocrystals produced by ion beam mixing. (C) 2000 Acta Metallurgica Inc. English PERGAMON-ELSEVIER SCIENCE LTD SILICON NANOCRYSTALS QUANTUM CONFINEMENT LUMINESCENCE NANOCLUSTERS SI Visible photoluminescence in ion beam mixed SiO2/Si/SiO2 layers Article 10.1016/S0965-9773(99)00414-6 1 NANOSTRUCTURED MATERIALS, v.11, no.8, pp.1239 - 1243 NANOSTRUCTURED MATERIALS 11 8 1239 1243 scie scopus 000087144600029 2-s2.0-18544391386 Materials Science, Multidisciplinary Materials Science Article SILICON NANOCRYSTALS QUANTUM CONFINEMENT LUMINESCENCE NANOCLUSTERS SI Si Nancrystals Ion Beam Mixing SiO₂ Luminescence