Son, MH Jung, SK Min, BD Hyun, CK Choi, BH Kim, EK Kim, Y Lim, JS 2024-01-21T15:04:10Z 2024-01-21T15:04:10Z 2021-09-04 1999-09-15 0021-4922 https://pubs.kist.re.kr/handle/201004/141912 We study the formation of self-assembled InGaAs quantum dots on GaAs substrate with a sub-micron platinum stripe pattern. Islands or quantum dots preferentially nucleate at the boundary of metal patterns. In addition, island density reduced region near the boundary of the metal pattern is found. Those results are attributed to the stress between metal stripe and GaAs surface, which produces a laterally stressed region around the metal stripe. Adatoms on this region preferentially migrate toward the edge of metal stripes with maximum stress. This result may show a possible way for the interconnection between randomly distributed self-assembled quantum dots and metal stripes. English JAPAN SOC APPLIED PHYSICS GROWTH ISLANDS LUMINESCENCE Stress-driven formation of InGaAs quantum dots on GaAs with sub-micron platinum pattern Article 10.1143/JJAP.38.L1003 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, v.38, no.9AB, pp.L1003 - L1005 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 38 9AB L1003 L1005 scie scopus 000083181100011 2-s2.0-0033353358 Physics, Applied Physics Article GROWTH ISLANDS LUMINESCENCE InGaAs quantum dots stress-driven formation AFM sub-micron platinum pattern island density reduced region