Bae, C Lee, JK Lee, SH Jung, HJ 2024-01-21T15:06:57Z 2024-01-21T15:06:57Z 2021-09-05 1999-09 0734-2101 https://pubs.kist.re.kr/handle/201004/141957 SrBi2Ta2O9 (SBT) thin films were deposited on (111) oriented Pt bottom electrodes using the rf magnetron sputtering method and then postannealed at 650-800 degrees C for 30 min in different oxygen atmospheres. The effect of Bi content on the c-axis preferred oriented growth was confirmed by the control of the Bi2O3 loss during the postannealing. With increasing Bi content in SBT thin films, the degree of the c-axis preferred orientation was enhanced. In addition, a bimodal grain size distribution due to the Sr deficiency in the SBT film was observed. It is suggested that the c-axis preferred oriented growth on Pt(111) bottom electrodes can be attributed to growth controlled by surface energy minimization. (C) 1999 American Vacuum Society. [S0734-2101(99)03705-7]. English A V S AMER INST PHYSICS SOL-GEL METHOD FERROELECTRIC PROPERTIES IN-SITU DEPOSITION BISMUTH Ex situ growth of the c-axis preferred oriented SrBi2Ta2O9 thin films on Pt/Ti/SiO2/Si substrates Article 10.1116/1.581967 1 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.17, no.5, pp.2957 - 2961 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 17 5 2957 2961 scie scopus 000082596600081 2-s2.0-0033456550 Materials Science, Coatings & Films Physics, Applied Materials Science Physics Article SOL-GEL METHOD FERROELECTRIC PROPERTIES IN-SITU DEPOSITION BISMUTH c-axis SrBi2Ta2O9 thin film ferroelectric