Kim, HJ Park, YK Kim, SI Kim, EK Kim, TW 2024-01-21T15:07:08Z 2024-01-21T15:07:08Z 2021-09-05 1999-09 0021-4922 https://pubs.kist.re.kr/handle/201004/141960 Facet evolution of (511)A of Al0.5Ga0.5As/GaAs multilayers grown on a mesa-patterned GaAs substrate by metalorganic chemical vapor deposition has been investigated. The time development equation of the growth morphology together with the bond density model was introduced to analyze the facet evolution. The facets at the concave surface on the mesa-patterned GaAs substrate during the growth process were evolved toward the growth surface with the highest growth rate. The facets having the highest growth rate were analyzed as a function of the surface migration length. The calculated results show that the highest growth rate in the surface plane of (511)A occurred at the concave surface on a mesa-patterned GaAs substrate with a surface migration length of larger than 1.5 mu m. English JAPAN J APPLIED PHYSICS CHEMICAL-VAPOR-DEPOSITION QUANTUM-WIRE STRUCTURES CRYSTALLOGRAPHIC ORIENTATION EPITAXIAL-GROWTH CBR4 DEPENDENCE MOCVD CCL4 Facet evolution of Al0.5Ga0.5As/GaAs multilayers grown on mesa-patterned GaAs substrate Article 10.1143/JJAP.38.4969 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.38, no.9A, pp.4969 - 4972 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 38 9A 4969 4972 scie scopus 000083181800004 Physics, Applied Physics Article CHEMICAL-VAPOR-DEPOSITION QUANTUM-WIRE STRUCTURES CRYSTALLOGRAPHIC ORIENTATION EPITAXIAL-GROWTH CBR4 DEPENDENCE MOCVD CCL4 patterned substrate epitaxy surface migration length dangling bond chemical bond density facet evolution metalorganic chemical vapor deposition GaAs AlGaAs