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<dcvalue element="contributor" qualifier="author">Chai,&#x20;KH</dcvalue>
<dcvalue element="contributor" qualifier="author">Heo,&#x20;NH</dcvalue>
<dcvalue element="contributor" qualifier="author">Na,&#x20;JG</dcvalue>
<dcvalue element="contributor" qualifier="author">Jeong,&#x20;HT</dcvalue>
<dcvalue element="contributor" qualifier="author">Lee,&#x20;SR</dcvalue>
<dcvalue element="date" qualifier="accessioned">2024-01-21T15:07:22Z</dcvalue>
<dcvalue element="date" qualifier="available">2024-01-21T15:07:22Z</dcvalue>
<dcvalue element="date" qualifier="created">2021-09-05</dcvalue>
<dcvalue element="date" qualifier="issued">1999-09</dcvalue>
<dcvalue element="identifier" qualifier="issn">0018-9464</dcvalue>
<dcvalue element="identifier" qualifier="uri">https:&#x2F;&#x2F;pubs.kist.re.kr&#x2F;handle&#x2F;201004&#x2F;141964</dcvalue>
<dcvalue element="description" qualifier="abstract">During&#x20;final&#x20;annealing&#x20;at&#x20;1200&#x20;degrees&#x20;C&#x20;under&#x20;a&#x20;high&#x20;vacuum,&#x20;changes&#x20;in&#x20;recrystallization&#x20;texture&#x20;with&#x20;final&#x20;annealing&#x20;time&#x20;were&#x20;observed&#x20;in&#x20;thin-gauged&#x20;3%&#x20;Si-Fe&#x20;alloys.&#x20;In&#x20;the&#x20;alloy&#x20;containing&#x20;30&#x20;ppm&#x20;bulk&#x20;sulfur,&#x20;the&#x20;recrystallization&#x20;texture&#x20;varied&#x20;from&#x20;the&#x20;{111}&#x20;&lt;uvw&gt;&#x20;to&#x20;the&#x20;{001}&#x20;&lt;uvw&gt;&#x20;and&#x20;finally&#x20;to&#x20;the&#x20;{110}&#x20;&lt;001&gt;&#x20;Goss&#x20;texture,&#x20;resulting&#x20;in&#x20;higher&#x20;magnetic&#x20;induction&#x20;than&#x20;1.90&#x20;T.&#x20;The&#x20;trough&#x20;in&#x20;magnetic&#x20;induction,&#x20;which&#x20;corresponds&#x20;to&#x20;the&#x20;relatively&#x20;high&#x20;surface-segregated&#x20;sulfur&#x20;range,&#x20;is&#x20;due&#x20;to&#x20;the&#x20;magnetically&#x20;detrimental&#x20;effect&#x20;of&#x20;those&#x20;textures,&#x20;i.e.&#x20;the&#x20;{111}&#x20;&lt;uvw&gt;&#x20;and&#x20;the&#x20;{001}&#x20;&lt;uvw&gt;.&#x20;In&#x20;the&#x20;alloy&#x20;containing&#x20;6&#x20;ppm&#x20;bulk&#x20;sulfur,&#x20;the&#x20;correlation&#x20;between&#x20;magnetic&#x20;induction&#x20;and&#x20;surface-segregated&#x20;sulfur&#x20;was&#x20;the&#x20;same&#x20;as&#x20;that&#x20;in&#x20;the&#x20;other&#x20;alloy.&#x20;These&#x20;results&#x20;clearly&#x20;indicate&#x20;that&#x20;the&#x20;surface&#x20;energy&#x20;induced&#x20;recrystallization&#x20;in&#x20;the&#x20;thin-gauged&#x20;3%&#x20;Si-Fe&#x20;alloys&#x20;is&#x20;strongly&#x20;affected&#x20;by&#x20;the&#x20;segregation&#x20;and&#x20;the&#x20;evaporation&#x20;of&#x20;sulfur.</dcvalue>
<dcvalue element="language" qualifier="none">English</dcvalue>
<dcvalue element="publisher" qualifier="none">IEEE-INST&#x20;ELECTRICAL&#x20;ELECTRONICS&#x20;ENGINEERS&#x20;INC</dcvalue>
<dcvalue element="subject" qualifier="none">SURFACE&#x20;SEGREGATION</dcvalue>
<dcvalue element="title" qualifier="none">Effects&#x20;of&#x20;segregated&#x20;sulfur&#x20;on&#x20;recrystallization&#x20;texture&#x20;and&#x20;magnetic&#x20;induction&#x20;in&#x20;thin-gauged&#x20;3%&#x20;silicon&#x20;steel</dcvalue>
<dcvalue element="type" qualifier="none">Article</dcvalue>
<dcvalue element="identifier" qualifier="doi">10.1109&#x2F;20.800528</dcvalue>
<dcvalue element="description" qualifier="journalClass">1</dcvalue>
<dcvalue element="identifier" qualifier="bibliographicCitation">IEEE&#x20;TRANSACTIONS&#x20;ON&#x20;MAGNETICS,&#x20;v.35,&#x20;no.5,&#x20;pp.3373&#x20;-&#x20;3375</dcvalue>
<dcvalue element="citation" qualifier="title">IEEE&#x20;TRANSACTIONS&#x20;ON&#x20;MAGNETICS</dcvalue>
<dcvalue element="citation" qualifier="volume">35</dcvalue>
<dcvalue element="citation" qualifier="number">5</dcvalue>
<dcvalue element="citation" qualifier="startPage">3373</dcvalue>
<dcvalue element="citation" qualifier="endPage">3375</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scie</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scopus</dcvalue>
<dcvalue element="identifier" qualifier="wosid">000083151500046</dcvalue>
<dcvalue element="identifier" qualifier="scopusid">2-s2.0-0033184068</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Engineering,&#x20;Electrical&#x20;&amp;&#x20;Electronic</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Physics,&#x20;Applied</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Engineering</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Physics</dcvalue>
<dcvalue element="type" qualifier="docType">Article;&#x20;Proceedings&#x20;Paper</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">SURFACE&#x20;SEGREGATION</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">sulfur&#x20;segregation</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">surface&#x20;energy</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">recrystallization</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">3%&#x20;Si-Fe</dcvalue>
</dublin_core>
