주병권 이상조 김훈 이윤희 오명환 2024-01-21T15:10:05Z 2024-01-21T15:10:05Z 2022-01-10 1999-08 https://pubs.kist.re.kr/handle/201004/142012 대한전기학회 Decrease of gate leakage current by employing Al sacrificial layer in the DLC-coated Si-tip FEA fabrication DLC-coated Si-tip FEA 제조에 있어서 Al 희생층을 이용한 게이트 누설 전류의 감소 Article 3 대한전기학회논문지 : 전기물성,응용부문 C = The Transactions of The Korean Institute of Electrical Engineers, v.48C, no.8, pp.577 - 579 대한전기학회논문지 : 전기물성,응용부문 C = The Transactions of The Korean Institute of Electrical Engineers 48C 8 577 579 FED Si-tip field emitter DLC gate-leakage current sacrificial layer field emission field emission display