Jung, SK Hyon, CK Park, JH Hwang, SW Ahn, D Son, MH Min, BD Kim, Y Kim, EK 2024-01-21T15:11:30Z 2024-01-21T15:11:30Z 2021-09-04 1999-08 0003-6951 https://pubs.kist.re.kr/handle/201004/142037 Planar-type quantum-dot devices have been fabricated and characterized. Aluminum metal electrodes with interelectrode spacing of 30 nm have been deposited on an InAs self-assembled quantum-dot wafer to form the quantum-dot devices. The current-voltage characteristics measured from the devices, in which a single quantum dot is placed in between the electrodes, exhibit negative differential resistance effects at the temperature above 77 K. They are interpreted as due to three-dimensional-zero-dimensional resonant tunneling through the InAs self-assembled quantum dot. (C) 1999 American Institute of Physics. [S0003-6951(99)03734-1]. English American Institute of Physics Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots Article 10.1063/1.124631 1 Applied Physics Letters, v.75, no.8, pp.1167 - 1169 Applied Physics Letters 75 8 1167 1169 N scopus 000082037500046 2-s2.0-0032615375 Physics, Applied Physics Article ROOM-TEMPERATURE TRANSISTOR electrical characterization