Kim, HB Kim, TG Chae, KH Whang, CN Jeong, JY Oh, MS Im, S Song, JB 2024-01-21T15:12:59Z 2024-01-21T15:12:59Z 2022-01-11 1999-07 0374-4884 https://pubs.kist.re.kr/handle/201004/142062 Si ions at an energy of 70 keV and a dose of 1.5x10(16) ions/cm(2) were implanted at room and elevated temperatures into 300 nm-thick SiO2 layers. The PL spectra showed a broad luminescence band around 600 nm. Higher peak intensities were observed from the sample implanted at elevated substrate temperatures than from those implanted at room temperature. On the contrary, the electron spin resonance signal decrease in intensity as the substrate temperature increases for implantation. From these observations, we conclude that increasing the implantation temperature effectively helps the formation of the radiative recombination centers in the Si-implanted SiO2 while reducing the density of non-radiative paramagnetic defects. English KOREAN PHYSICAL SOC ELECTRON-SPIN-RESONANCE VISIBLE-LIGHT EMISSION ION-IMPLANTATION SILICON DIOXIDE NANOCRYSTALS INTERFACE DEFECTS WAFERS OXIDE Photoluminescence induced by Si-implantation into SiO2 layers at elevated temperatures Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.35, pp.S588 - S590 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 35 S588 S590 scie scopus 000081827900131 2-s2.0-0033411365 Physics, Multidisciplinary Physics Article; Proceedings Paper ELECTRON-SPIN-RESONANCE VISIBLE-LIGHT EMISSION ION-IMPLANTATION SILICON DIOXIDE NANOCRYSTALS INTERFACE DEFECTS WAFERS OXIDE