Jeong, JY Im, SI Oh, MS Kim, HB Chae, KH Whang, CN Song, JH 2024-01-21T15:13:02Z 2024-01-21T15:13:02Z 2022-01-11 1999-07 0374-4884 https://pubs.kist.re.kr/handle/201004/142063 Luminescences from Si and Ge nanocrystals were experimentally investigated. Si and Ge ions were implanted into 300 nm-thick SiO2 films grown on crystalline Si at an energy of 55 keV with doses of 1 x 10(17) cm(-2) and 3 x 10(16) cm(-2) for Si implantation and at 100 keV with a dose of 3 x 10(16) cm(-2) for Ge implantation. Visible photoluminescences around 1.72 eV (720 nm) and 2.14 eV (580 cm nm) were observed from the samples annealed at 1100 degrees C after Si and Ge implantation, respectively. The results of the x-ray photoelectron spectroscopy (XPS) measurements and passivation annealing supported the presence of nanocrystals. The theoretical exciton energy values in the Si and the Ge nanocrystals, based on the quantum confinement theory, corresponded well to our experimental results. English KOREAN PHYSICAL SOC VISIBLE-LIGHT EMISSION ION-IMPLANTATION QUANTUM DOTS FILMS LUMINESCENCE EXCITONS OXIDE Photoluminescence emitted from Si vs. Ge nanocrystals embedded in a SiO2 matrix Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.35, pp.S591 - S594 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 35 S591 S594 scie scopus 000081827900132 2-s2.0-0033466980 Physics, Multidisciplinary Physics Article; Proceedings Paper VISIBLE-LIGHT EMISSION ION-IMPLANTATION QUANTUM DOTS FILMS LUMINESCENCE EXCITONS OXIDE