Kim, JW Son, CS Choi, IH Park, YK Kim, YT Ambacher, O Stutzmann, M 2024-01-21T15:14:08Z 2024-01-21T15:14:08Z 2021-09-05 1999-07 0374-4884 https://pubs.kist.re.kr/handle/201004/142082 The dependence of the absorption edge of wurtzite AlxGa(1-x)N on the AIN mole fraction was studied. The Al mole fraction was varied from 0 to 1. The absorption coefficient at room temperature was determined by transmission and photothermal deflection spectroscopy. Photothermal deflection spectroscopy can be applied to determine the low absorbance values. With those results, the effective bandgaps of the AlxGa1-xN alloys were defined as the photon energy E-4.8 at an absorption coefficient of 10(4.8) cm(-1). From the energy position of the absorption edge versus AIN mole fraction, a bowing parameter of 1.3 eV could be determined. The bowing parameter agreed quite well with the measured effective bandgaps of AlGaN alloys. English KOREAN PHYSICAL SOC STRUCTURE LASER-DIODES SAPPHIRE Characterization of the absorption edges of epitaxial AlGaN grown by plasma-induced molecular beam epitaxy Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.35, pp.S279 - S282 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 35 S279 S282 scie scopus 000081827900055 2-s2.0-0033408919 Physics, Multidisciplinary Physics Article; Proceedings Paper STRUCTURE LASER-DIODES SAPPHIRE absorption edges ALGaN PIMBE Absorption Coefficient Bowing Parameter