Kim, JW Park, YK Kim, YT Son, CS Choi, IH Ambacher, O Stutzmann, M 2024-01-21T15:14:32Z 2024-01-21T15:14:32Z 2021-09-05 1999-07 0374-4884 https://pubs.kist.re.kr/handle/201004/142089 The room temperature optical transmission spectra of GaN/InGaN/GaN single quantum wells and InGaN/GaN heterostructures grown by low-pressure metalorganic chemical-vapor deposition have been measured, The dependence of the absorption edge of the GaN/InGaN/GaN single quantum well on the well width has been determined from the transmission spectra. The result shows that the absorption edge of the GaN/InGaN/GaN single quantum well shifts towards lower energy as the well width increases. The dependence of the absorption edges of the InGaN/GaN heterostructures on the InN molar fraction has also been determined from the transmission spectra. The result is compared with Osamura's work, and in the range of a 0 - 0.1 InN molar fraction; our result shows better agreement with the calculated values of the bowing parameter; 1.05 eV, than Osamura's values do. English KOREAN PHYSICAL SOC TEMPERATURE-DEPENDENCE OPTICAL-PROPERTIES FILMS CONSTANTS DIODES Transmission spectra of InGaN single quantum wells and InGaN GaN heterostructures grown by metalorganic chemical vapor deposition Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.35, no.1, pp.42 - 45 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 35 1 42 45 scie scopus 000081510100009 2-s2.0-0001820779 Physics, Multidisciplinary Physics Article TEMPERATURE-DEPENDENCE OPTICAL-PROPERTIES FILMS CONSTANTS DIODES GaN InGaN transmission spectra quantum wells heterostructure metalorganic chemical vapor deposition