Yoo, KS Oh, YJ Kim, TS Yoon, YS Kim, CK 2024-01-21T15:15:27Z 2024-01-21T15:15:27Z 2021-09-04 1999-07 0374-4884 https://pubs.kist.re.kr/handle/201004/142105 WO3 thin-film sensors were deposited by using a high-vacuum resistance heating evaporator at ambient temperature and at 300 degrees C, and then annealed at 500 degrees C for 4 hours in air. The annealed WO3 films had a polycrystalline triclinic structure. In the case of the films deposited at 300 degrees C, the microstructure of the annealed films, the NOx sensitivities, and the response characteristics were improved. English KOREAN PHYSICAL SOC SEMICONDUCTORS SENSITIVITY CO Effect of the microstructure on the NOx gas-sensing characteristics of WO3 thin-film sensors Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.35, pp.S420 - S423 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 35 S420 S423 scie scopus 000081827900089 2-s2.0-19544379554 Physics, Multidisciplinary Physics Article; Proceedings Paper SEMICONDUCTORS SENSITIVITY CO NOx sensor WO3 thin films gas sensor