Koh, SK Choi, SC Kim, KH Jung, HJ Choi, GJ Yang, HS Cho, YS 2024-01-21T15:16:05Z 2024-01-21T15:16:05Z 2021-09-05 1999-06-22 0040-6090 https://pubs.kist.re.kr/handle/201004/142115 Plasma enhanced chemical vapor deposition of the Cu films on Si substrate was investigated in which 30 Angstrom Cu-seed layer on the substrate was formed by partially ionized beam prior to deposition. In order to elucidate the difference in growth mechanism of Cu film between on Cu-seed layer and on bare Si, the initial stage of Cu-seed layer grown by partially ionized beam was studied by transmission electron microscopy and different nucleation formation processes from conventional method was shown. A high deposition rate and an improved adhesion strength were achieved when thick Cu film on the Cu seeded Si substrate was deposited by plasma enhanced chemical vapor deposition. (C) 1999 Elsevier Science S.A. All rights reserved. English ELSEVIER SCIENCE SA CLUSTER BEAM FILM DEPOSITION METAL-CLUSTERS THIN-FILMS COPPER METALLIZATION SUBSTRATE PRECURSOR Effects of Cu seeding layer on Si grown by partially ionized beam in plasma enhanced chemical vapor deposition Article 10.1016/S0040-6090(98)01739-8 1 THIN SOLID FILMS, v.347, no.1-2, pp.121 - 126 THIN SOLID FILMS 347 1-2 121 126 scie scopus 000080949800017 2-s2.0-0344771136 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article CLUSTER BEAM FILM DEPOSITION METAL-CLUSTERS THIN-FILMS COPPER METALLIZATION SUBSTRATE PRECURSOR plasma enhanced chemical vapor deposition partially ionized beam seed layer adhesion copper