Shin, DW Choi, DJ Kim, GH 2024-01-21T15:16:26Z 2024-01-21T15:16:26Z 2022-01-11 1999-06-01 0040-6090 https://pubs.kist.re.kr/handle/201004/142121 SOI (silicon on insulator) was fabricated through the direct bonding of a hydrophilic single crystal Si wafer and a thermally oxidized SiO2 film. The hydrophilic Si was formed by treating the surface with modified SC-1 (NH4OH:H2O2:H2O) solution. The wafers were directly bonded to each other and were annealed at the temperature of 1200 degrees C for 1 h. By removing the oxide film, it was possible to examine the stacking faults at the bonding interface and the oxidation interface. The distributions of the stacking faults were showing different behaviors between the bonded and the void regions. While the stacking faults of high density were distributed in the ordered ring-like fashion in the bonded region, the stacking faults of linear orientation were shown in the void region as shown in the thermal oxidation. To investigate the relation between the stacking faults and the lattice deformation at the interface, the lattice strains were measured through CBED (convergent beam electron diffraction) analysis using transmission electron microscopy. It was found that both the thermal and the intrinsic strains were strongly influenced by the stacking faults. (C) 1999 Elsevier Science S.A. All rights reserved. English ELSEVIER SCIENCE SA ON-INSULATOR OXIDATION GROWTH WAFERS RING The stacking faults and their strain effect at the Si/SiO2 interfaces of a directly bonded SOI (silicon on insulator) Article 10.1016/S0040-6090(98)01468-0 1 THIN SOLID FILMS, v.346, no.1-2, pp.169 - 173 THIN SOLID FILMS 346 1-2 169 173 scie scopus 000081019400019 2-s2.0-0033149168 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article ON-INSULATOR OXIDATION GROWTH WAFERS RING insulator silicon oxide interface transmission electron microscopy