Park, YK Kim, SI Son, CS 2024-01-21T15:31:53Z 2024-01-21T15:31:53Z 2021-09-05 1999-06 0374-4884 https://pubs.kist.re.kr/handle/201004/142159 In order to explain the etching effect of the carbon tetrabromide in the Vertical growth of GaAs during metalorganic chemical vapor deposition. the dependence of the vertical growth rate of GaAs epilayer on the growth temperature and on the carbon tetrabromide mole fraction has been investigated. The vertical growth rate decreases with increasing growth temperature in the range of 600 similar to 700 degrees C, whereas it increases with increasing growth temperature in the range of 700 similar to 800 degrees C. The vertical growth rate, thus, shows the minimum value at the growth temperature of 700 degrees C. The high mole fraction of carbon tetrabromide causes a significant diminution of the vertical growth rate of GaAs epilayer; The decrement of the vertical growth rate is attributed to the increment of bromine atoms in the reactor with increasing the carbon tetrabromide mole fraction. The increment of bromine atoms causes the etching effect of carbon tetrabromide. English KOREAN PHYSICAL SOC QUANTUM-WIRE STRUCTURES PHASE EPITAXY FABRICATION ALGAAS DOTS ORIENTATION DEPENDENCE REGROWTH GROOVES INGAAS Etching effect of carbon tetrabromide in the vertical growth of GaAs during metalorganic chemical vapor deposition Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.34, pp.S432 - S434 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 34 S432 S434 scie scopus 000081307100048 2-s2.0-0033410363 Physics, Multidisciplinary Physics Article; Proceedings Paper QUANTUM-WIRE STRUCTURES PHASE EPITAXY FABRICATION ALGAAS DOTS ORIENTATION DEPENDENCE REGROWTH GROOVES INGAAS GaAs tetrabromide etching effect metalorganic chemical vapor deposition