Hwang, GS Moon, SH Nam, SW Shin, CB 2024-01-21T15:32:03Z 2024-01-21T15:32:03Z 2021-09-05 1999-06 0884-2914 https://pubs.kist.re.kr/handle/201004/142162 Profile evolution simulations during chemical vapor deposition based on a 2D continuum model reveal that the type of surface kinetics plays an important role in determining step coverage of films deposited in high aspect ratio trenches and vias. Linear surface kinetics, resulting from an adsorption rate limited process, is found to cause difficulty in bringing about conformal step coverage in deep narrow trenches without reducing the growth rate considerably, Under such condition, void-free filling cannot be achieved while maintaining a growth rate acceptable to integrated circuit (IC) manufacturing. The numerical study also suggests that the high tendency of the precursor for chemical equilibrium on a surface, resulting in nonlinear kinetics by a surface reaction limited process, is crucial to achieve a uniform step coverage as typically observed in SiO2 deposition from tetraethylorthosilicate (TEOS). English MATERIALS RESEARCH SOCIETY SILICON DIOXIDE TETRAETHOXYSILANE SIMULATION PRESSURE FILMS TETRAETHYLORTHOSILICATE MECHANISMS PYROLYSIS QUALITY OZONE Effect of surface kinetics on the step coverage during chemical vapor deposition Article 10.1557/JMR.1999.0318 1 JOURNAL OF MATERIALS RESEARCH, v.14, no.6, pp.2377 - 2380 JOURNAL OF MATERIALS RESEARCH 14 6 2377 2380 scie scopus 000082550600025 2-s2.0-0032661512 Materials Science, Multidisciplinary Materials Science Article SILICON DIOXIDE TETRAETHOXYSILANE SIMULATION PRESSURE FILMS TETRAETHYLORTHOSILICATE MECHANISMS PYROLYSIS QUALITY OZONE CVD TEOS SiO2 surface