Choi, BH Hwang, SW Kim, IG Shin, HC Kim, Y Kim, EK 2024-01-21T15:32:07Z 2024-01-21T15:32:07Z 2021-09-05 1999-06 0167-9317 https://pubs.kist.re.kr/handle/201004/142163 A quantum-dot transistor incorporating silicon self-assembled quantum dots and planar nano-meter sized metal pads (nano-arms) has been fabricated. The current-voltage characteristics measured from the transistor exhibits staircases and oscillations, whose interpretation is consistent with the single electron tunneling through the dots located in between the source and the drain nano-arms. English ELSEVIER SCIENCE BV A silicon self assembled quantum dot transistor operating at room temperature. Article 10.1016/S0167-9317(99)00165-3 1 MICROELECTRONIC ENGINEERING, v.47, no.1-4, pp.115 - 117 MICROELECTRONIC ENGINEERING 47 1-4 115 117 scie scopus 000081403600026 Engineering, Electrical & Electronic Nanoscience & Nanotechnology Optics Physics, Applied Engineering Science & Technology - Other Topics Optics Physics Article; Proceedings Paper silicon