Lee, JH Park, BK Rhie, K Choe, G Shin, KH 2024-01-21T15:32:44Z 2024-01-21T15:32:44Z 2021-09-04 1999-06 0304-8853 https://pubs.kist.re.kr/handle/201004/142174 Magnetoresistance (MR) and Planar Hall effect (PHE) of Ta 50 Angstrom/NiFe 60 Angstrom/Co(90)Fe(10) 10 Angstrom/Cu 20 Angstrom/Co(90)Fe(10) 10 Angstrom/NiFe 23/Angstrom FeMn 100 Angstrom/Ta 50 Angstrom spin valve were measured with the magnetic field applied in the plane of the sample. A single batch thin film was etched parallel and perpendicular to the easy direction of the pinned layer. When the field and current were applied along the easy direction, we observed a clear evidence of before- and after-domain rotation of the free layer, near H = 0. Larger after-domain rotation of the free layer effect was observed in the sample etched along the hard axis, because the shape anisotropy tilted bias field made the hysteresis of the pinned layer have a longer tail beyond H > 0. (C) 1999 Published by Elsevier Science B.V. All rights reserved. English ELSEVIER SCIENCE BV ANISOTROPIC MAGNETORESISTANCE Before- and after-domain rotation of the free layer of an FeMn based spin valve Article 10.1016/S0304-8853(98)00628-3 1 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.198-99, pp.73 - 75 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 198-99 73 75 scie scopus 000080779600025 2-s2.0-0032660216 Materials Science, Multidisciplinary Physics, Condensed Matter Materials Science Physics Article; Proceedings Paper ANISOTROPIC MAGNETORESISTANCE domain rotation spin valve magnetoresistance Planar Hall effect