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<dublin_core schema="dc">
<dcvalue element="contributor" qualifier="author">Ha,&#x20;SD</dcvalue>
<dcvalue element="contributor" qualifier="author">Sachs,&#x20;E</dcvalue>
<dcvalue element="date" qualifier="accessioned">2024-01-21T15:35:53Z</dcvalue>
<dcvalue element="date" qualifier="available">2024-01-21T15:35:53Z</dcvalue>
<dcvalue element="date" qualifier="created">2021-09-04</dcvalue>
<dcvalue element="date" qualifier="issued">1999-05</dcvalue>
<dcvalue element="identifier" qualifier="issn">0894-6507</dcvalue>
<dcvalue element="identifier" qualifier="uri">https:&#x2F;&#x2F;pubs.kist.re.kr&#x2F;handle&#x2F;201004&#x2F;142228</dcvalue>
<dcvalue element="description" qualifier="abstract">A&#x20;methodology&#x20;for&#x20;on-line&#x20;process&#x20;control&#x20;of&#x20;uniformity&#x20;is&#x20;developed&#x20;based&#x20;on&#x20;the&#x20;division&#x20;of&#x20;process&#x20;variability&#x20;into&#x20;two&#x20;categories:&#x20;that&#x20;which&#x20;can&#x20;be&#x20;effectively&#x20;controlled&#x20;on-line&#x20;and&#x20;that&#x20;which&#x20;must&#x20;be&#x20;optimized&#x20;off-line.&#x20;This&#x20;categorization&#x20;is&#x20;based&#x20;on&#x20;the&#x20;physics&#x20;of&#x20;the&#x20;process&#x20;and&#x20;equipment.&#x20;In&#x20;the&#x20;case&#x20;of&#x20;axisymmetric&#x20;single&#x20;wafer&#x20;processing,&#x20;the&#x20;radial&#x20;uniformity&#x20;can&#x20;be&#x20;controlled&#x20;on-line,&#x20;as&#x20;a&#x20;number&#x20;of&#x20;process&#x20;parameters&#x20;will&#x20;have&#x20;a&#x20;direct&#x20;influence&#x20;on&#x20;the&#x20;radial&#x20;uniformity.&#x20;However,&#x20;circumferential&#x20;uniformity&#x20;is&#x20;not&#x20;directly&#x20;influenced&#x20;by&#x20;any&#x20;process&#x20;parameters&#x20;and&#x20;must&#x20;be&#x20;optimized&#x20;off-line.&#x20;The&#x20;choice&#x20;of&#x20;process&#x20;parameters&#x20;to&#x20;effect&#x20;on-line&#x20;control&#x20;is&#x20;designed&#x20;to&#x20;decouple&#x20;the&#x20;successive&#x20;stages&#x20;of&#x20;optimization&#x20;and&#x20;control&#x20;and&#x20;is&#x20;guided&#x20;by&#x20;the&#x20;formulation&#x20;of&#x20;appropriate&#x20;performance&#x20;metrics,&#x20;The&#x20;methodology&#x20;presented&#x20;simplifies&#x20;on-line&#x20;control&#x20;and&#x20;recommends&#x20;a&#x20;narrower&#x20;goal&#x20;for&#x20;its&#x20;implementation,&#x20;one&#x20;that&#x20;can&#x20;be&#x20;achieved&#x20;with&#x20;minimum&#x20;risk&#x20;of&#x20;inadvertently&#x20;degrading&#x20;the&#x20;performance&#x20;of&#x20;the&#x20;process.&#x20;The&#x20;methodology&#x20;is&#x20;applied&#x20;to&#x20;single&#x20;wafer&#x20;plasma&#x20;oxide&#x20;and&#x20;polysilicon&#x20;etching&#x20;processes.&#x20;It&#x20;is&#x20;shown&#x20;that&#x20;radial&#x20;uniformity&#x20;is&#x20;improved&#x20;by&#x20;applying&#x20;on-line&#x20;control&#x20;while&#x20;minimizing&#x20;the&#x20;impact&#x20;on&#x20;circumferential&#x20;uniformity,&#x20;with&#x20;the&#x20;result&#x20;that&#x20;overall&#x20;uniformity&#x20;within&#x20;a&#x20;wafer&#x20;is&#x20;improved.&#x20;The&#x20;methodology&#x20;is&#x20;also&#x20;successfully&#x20;applied&#x20;to&#x20;effect&#x20;a&#x20;step&#x20;change&#x20;in&#x20;the&#x20;radial&#x20;profile&#x20;of&#x20;etching&#x20;rate.</dcvalue>
<dcvalue element="language" qualifier="none">English</dcvalue>
<dcvalue element="publisher" qualifier="none">IEEE-INST&#x20;ELECTRICAL&#x20;ELECTRONICS&#x20;ENGINEERS&#x20;INC</dcvalue>
<dcvalue element="subject" qualifier="none">WEIGHTED&#x20;MOVING&#x20;AVERAGE</dcvalue>
<dcvalue element="title" qualifier="none">On-line&#x20;control&#x20;of&#x20;process&#x20;uniformity&#x20;in&#x20;single&#x20;wafer&#x20;processes</dcvalue>
<dcvalue element="type" qualifier="none">Article</dcvalue>
<dcvalue element="identifier" qualifier="doi">10.1109&#x2F;66.762879</dcvalue>
<dcvalue element="description" qualifier="journalClass">1</dcvalue>
<dcvalue element="identifier" qualifier="bibliographicCitation">IEEE&#x20;TRANSACTIONS&#x20;ON&#x20;SEMICONDUCTOR&#x20;MANUFACTURING,&#x20;v.12,&#x20;no.2,&#x20;pp.200&#x20;-&#x20;213</dcvalue>
<dcvalue element="citation" qualifier="title">IEEE&#x20;TRANSACTIONS&#x20;ON&#x20;SEMICONDUCTOR&#x20;MANUFACTURING</dcvalue>
<dcvalue element="citation" qualifier="volume">12</dcvalue>
<dcvalue element="citation" qualifier="number">2</dcvalue>
<dcvalue element="citation" qualifier="startPage">200</dcvalue>
<dcvalue element="citation" qualifier="endPage">213</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scie</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scopus</dcvalue>
<dcvalue element="identifier" qualifier="wosid">000080122200008</dcvalue>
<dcvalue element="identifier" qualifier="scopusid">2-s2.0-0033366438</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Engineering,&#x20;Manufacturing</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Engineering,&#x20;Electrical&#x20;&amp;&#x20;Electronic</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Physics,&#x20;Applied</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Physics,&#x20;Condensed&#x20;Matter</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Engineering</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Physics</dcvalue>
<dcvalue element="type" qualifier="docType">Article</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">WEIGHTED&#x20;MOVING&#x20;AVERAGE</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">on-line&#x20;control</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">process&#x20;control</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">single&#x20;wafer&#x20;processing</dcvalue>
</dublin_core>
