Kim, Y.T. Kim, D.J. Park, J.-W. 2024-01-21T15:36:13Z 2024-01-21T15:36:13Z 2021-09-02 1999-05 0021-4922 https://pubs.kist.re.kr/handle/201004/142234 We have suggested N2+ ion modification method to improve the thermal stability of Mo thin film by implanting 3 × 1017 N2+ ions/cm2 with very low acceleration energy of 20 keV. The Mo film modified by N2+ ions (Mo-N2+) keeps microcrystalline after annealing at 600°C and performs excellent diffusion barrier against Cu atoms at 700°C for 30 min. The stress evolution of the Mo-N2+ thin film during the annealing process indicates that highly compressive stress changes to low tensile stress at 600°C for 30 min. ？1999 Publication Board, Japanese Journal of Applied Physics. English Japan Society of Applied Physics Annealing Compressive strength Copper Diffusion in solids Ion implantation Molybdenum Nitrides Nitrogen Silicon Tensile stress Thermodynamic stability Thin films Diffusion barriers Molybdenum nitride Metallic films N2+ implantation approaches for improving thermal stability of Cu/Mo/Si contact structure Article 10.1143/jjap.38.2993 1 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, v.38, no.5 A, pp.2993 - 2996 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 38 5 A 2993 2996 scopus 2-s2.0-0032648977 Article Annealing Compressive strength Copper Diffusion in solids Ion implantation Molybdenum Nitrides Nitrogen Silicon Tensile stress Thermodynamic stability Thin films Diffusion barriers Molybdenum nitride Metallic films Diffusion barrier Mo-nitride N2+ implantation Stress Thermal stability