Dimitriadis, CA Brini, J Lee, JI Farmakis, FV Kamarinos, G 2024-01-21T15:37:52Z 2024-01-21T15:37:52Z 2021-09-01 1999-04-01 0021-8979 https://pubs.kist.re.kr/handle/201004/142263 Polycrystalline silicon thin-film transistors show a 1/f(gamma) (with gamma<1) low frequency noise behavior. The 1/f(gamma) noise is explained by emission and trapping processes of carriers between trapping states located within an energy range of kT around the Fermi level and the exponential tail states. We have derived a simple relationship between the frequency index gamma of the noise spectrum and the energy distribution parameter of the tail states. From the experimental noise data, the theoretical model allows us to determine the tail states energy distribution and the grain boundary trap density. (C) 1999 American Institute of Physics. [S0021-8979(99)03107-2]. English AMER INST PHYSICS 1/f(gamma) noise in polycrystalline silicon thin-film transistors Article 10.1063/1.369770 1 JOURNAL OF APPLIED PHYSICS, v.85, no.7, pp.3934 - 3936 JOURNAL OF APPLIED PHYSICS 85 7 3934 3936 scie scopus 000079403900086 2-s2.0-0032607408 Physics, Applied Physics Article 키워드