Oh, MS Choi, SG Kim, YD Woo, DH Koh, EH Kim, SH Kang, KN Rhee, SJ Woo, JC 2024-01-21T15:39:54Z 2024-01-21T15:39:54Z 2022-01-10 1999-04 0374-4884 https://pubs.kist.re.kr/handle/201004/142299 We present optical studies of a series of GaAs/AlAs short period superlattices (SLs) grown by Molecular Beam Epitaxy (MBE). The structural properties were examined by X-ray diffraction measurements. Quantum confinement of the electronic states was observed in the low temperature photoluminescence (PL). Spectroscopic ellipsometric (SE) measurements were also performed to determine energies of the interband transitions at room temperature. As n increases, we found that the lower transition energies (below 4.0 eV) decrease. The results are compared with low temperature photoluminescence measurements. We found a new structure at the lower E-2 peak, which demonstrates the best resolution of the E-2 structure in these SLs so far obtained by SE. English KOREAN PHYSICAL SOC GAAS/ALAS SUPERLATTICES DIELECTRIC FUNCTION SPECTROSCOPIC ELLIPSOMETRY GAAS TRANSITIONS ALXGA1-XAS SI GE Optical studies on a series of AlAs/GaAs short period superlattices Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.34, pp.S54 - S57 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 34 S54 S57 scie scopus 000080134800015 2-s2.0-0033453885 Physics, Multidisciplinary Physics Article; Proceedings Paper GAAS/ALAS SUPERLATTICES DIELECTRIC FUNCTION SPECTROSCOPIC ELLIPSOMETRY GAAS TRANSITIONS ALXGA1-XAS SI GE superlattic