Kim, DM Song, SH Kim, HJ Kang, KN 2024-01-21T16:01:50Z 2024-01-21T16:01:50Z 2021-09-04 1999-02 0741-3106 https://pubs.kist.re.kr/handle/201004/142436 Electrical characteristics of an n-channel Al0.3Ga0.7As/GaAs/In0.13Ga0.87As pseudomorphic HEMT (PHEMT) with L-g = 1 mu m on GaAs are characterized under optical input (P-opt). Gate leakage and drain current have been analyzed as a function of V-GS, V-DS, and P-opt . We observed monotonically increasing gate leakage current due to the energy barrier lowering by the optically induced photovoltage, which means that gate input characteristics are significantly limited by the photovoltaic effect. However, we obtained a strong nonlinear photoresponsivity of the drain current, which is limited by the photoconductive effect, We also proposed a device model with an optically induced parasitic Al-0.3 Ga-0.7 As MESFET parallel to the In-0.13 Ga0.87As channel PHEMT for the physical mechanism in the drain current saturation under high optical input power. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC Electrical characteristics of an optically controlled N-channel AlGaAs/GaAs/InGaAs pseudomorphic HEMT Article 1 IEEE ELECTRON DEVICE LETTERS, v.20, no.2, pp.73 - 76 IEEE ELECTRON DEVICE LETTERS 20 2 73 76 scie scopus 000078372500001 2-s2.0-0033079852 Engineering, Electrical & Electronic Engineering Article FET GaAs HEMT optoelectronics photodetector