Kim, TW Lee, DU Yoon, YS Shin, YH Kim, CO 2024-01-21T16:02:00Z 2024-01-21T16:02:00Z 2021-09-04 1999-01-29 0040-6090 https://pubs.kist.re.kr/handle/201004/142439 Fe thin films were grown on p-InP (100) substrates by ion-beam-assisted deposition with the goal of producing sharp Fe/p-InP interfaces with enhanced rectifying properties. X-ray diffraction measurements showed that an Fe layer grown on an InP substrate was polycrystalline, with a relatively sharp interface as seen by Auger electron spectroscopy. Transmission electron microscopy also confirmed the polycrystalline character of the Fe layer and showed that it consisted of small domains. Current-voltage (I-V) measurements performed on Fe/InP diodes revealed good rectification. The Schottky barrier height and the diode ideality factor obtained from these I-V measurements were 0.64 and 1.2 respectively. These results indicate that Fe films grown on p-InP (100) at-room temperature can be used for the fabrication of stable metal gates in new kinds of InP based metal-semiconductor held-effect transistors. (C) 1999 Elsevier Science S.A. All rights reserved. English ELSEVIER SCIENCE SA EPITAXIAL-GROWTH INTERFACE GAAS ANISOTROPY CONTACTS Structural and electrical properties of Fe films grown on InP substrates Article 10.1016/S0040-6090(98)01063-3 1 THIN SOLID FILMS, v.338, no.1-2, pp.161 - 164 THIN SOLID FILMS 338 1-2 161 164 scie scopus 000078758500026 2-s2.0-0032715742 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article EPITAXIAL-GROWTH INTERFACE GAAS ANISOTROPY CONTACTS Auger electron spectroscopy indium phosphide iron transmission electron microscopy