Oh, MS Joo, MH Im, S Kim, HB Kim, HK Song, JH 2024-01-21T16:02:58Z 2024-01-21T16:02:58Z 2022-01-11 1999-01 0168-583X https://pubs.kist.re.kr/handle/201004/142456 Metastable pseudomorphic Ge0.06Si0.94 alloy layers grown by molecular beam epitaxy (MBE) on Si (100) substrates were implanted at room temperature by 70 keV BF2+ ions with three different doses of 3x10(13), 1x10(14), and 2.5x10(14) cm(-2). The implanted samples were subsequently annealed at 800 degrees C and 900 degrees C for 30 min in a vacuum tube furnace. Observed by MeV He-4 channeling spectrometry, the sample implanted at a dose of 2.5x10(14) BF2+ cm(-2) is amorphized from surface to a depth of about 90 nm among all as-implanted samples. Crystalline degradation and strain-relaxation of post-annealed Ge0.06Si0.94 samples become pronounced as the dose increases. Only the samples implanted at 3x10(13) cm(-2) do not visibly degrade nor relax during anneal at 800 degrees C. In the leakage current measurements, no serious leakage cm is found in most of the samples except for one which is annealed at 800 degrees C for 30 min after implantation to a dose of 2.5x10(14) cm(-2). It is concluded that such a low dose of 3x10(13) BF2+ cm(-2) can be doped by implantation to conserve intrinsic strain of the pseudomorphic GeSi, while for high dose regime to meet the strain-relaxation, annealing at high temperatures over 900 degrees C is necessary to prevent serious leakages from occuring near relaxed GeSi/Si interfaces. (C) 1999 Elsevier Science B.V. All rights reserved. English ELSEVIER SCIENCE BV SI(100) DEFECTS SILICON Effects of BF2+ implantation on the strain-relaxation of pseudomorphic metastable Ge0.06Si0.94 alloy layers Article 10.1016/S0168-583X(98)90559-6 1 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, v.147, no.1-4, pp.49 - 55 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 147 1-4 49 55 scie scopus 000077846200009 2-s2.0-0032756665 Instruments & Instrumentation Nuclear Science & Technology Physics, Atomic, Molecular & Chemical Physics, Nuclear Instruments & Instrumentation Nuclear Science & Technology Physics Article; Proceedings Paper SI(100) DEFECTS SILICON ion implantation strain-relaxation doping GeSi leakage current