Choi, WB Ju, BK Lee, YH Oh, MH Lee, NY Sung, MY 2024-01-21T16:10:53Z 2024-01-21T16:10:53Z 2021-09-03 1999-01 0022-2461 https://pubs.kist.re.kr/handle/201004/142595 A silicon-to-In2O3:Sn coated glass bonding has been developed for the package of field emission arrays fabricated on the silicon wafer, utilizing a conventional silicon-to- silicon anodic bonding using the glass layer. A 1.8 mu m Pyrex #7740 glass layer was deposited on the In2O3:Sn coated glass by an electron beam evaporation. It was confirmed that the composition of the glass layer was nearly the same as that of the bulk Pyrex #7740 glass plate. In this work, bonding the silicon and In2O3:Sn coated glass was achieved at a temperature of 190 degrees C with an applied voltage of 60 V-dc. A secondary ion mass spectroscopy analysis was used to confirm the modeled bonding kinetics of the silicon-to-In2O3:Sn coated glass. (C) 1999 Kluwer Academic Publishers. English KLUWER ACADEMIC PUBL Silicon-to-indium tin oxide coated glass bonding for packaging of field emission arrays fabricated on silicon wafer Article 10.1023/A:1004654116591 1 JOURNAL OF MATERIALS SCIENCE, v.34, no.19, pp.4711 - 4717 JOURNAL OF MATERIALS SCIENCE 34 19 4711 4717 scie scopus 000082188000010 2-s2.0-0033204017 Materials Science, Multidisciplinary Materials Science Article MEMS