Lee, HN Choh, SH Shin, DS Kim, YT 2024-01-21T16:11:52Z 2024-01-21T16:11:52Z 2021-09-03 1999-01 0015-0193 https://pubs.kist.re.kr/handle/201004/142612 We have fabricated a metal/ferroelectric/insulator/semiconductor (MFIS) capacitor using Pt/SrBi2Ta2O9(SBT)/CeO2/Si. The CeO2 thin films were deposited by reactive sputtering at room temperature and annealed at 800, 900, and 1100 degreesC for 5 min in a halogen lamp furnace. The SET thin films were spin coated by metal-organic decomposition (MOD) method on the annealed CeO2/Si substrates. The surface morphology of SET films was affected by the substrate roughness of CeO2 thin films. The leakage current densities of SET films on the as-deposited and the 900 degreesC annealed CeO2 films were 1.9x10(-6) A/cm(2) and 6.1x10(-9)A/cm(2), respectively at -10 V. English GORDON BREACH SCI PUBL LTD CEO2 SAPPHIRE SURFACE SILICON GROWTH LAYERS FILMS Correlation between morphological and electrical characteristics of Pt/SrBi2Ta2O9/CeO2/Si capacitors Article 1 FERROELECTRICS, v.232, no.1-4, pp.1015 - 1020 FERROELECTRICS 232 1-4 1015 1020 scie scopus 000165296900021 2-s2.0-6044251254 Materials Science, Multidisciplinary Physics, Condensed Matter Materials Science Physics Article; Proceedings Paper CEO2 SAPPHIRE SURFACE SILICON GROWTH LAYERS FILMS ferroelectric gate morphology SrBi2Ta2O9 CeO2 MFS MFIS