Jeong, JY Im, S Oh, MS Kim, HB Chae, KH Whang, CN Song, JH 2024-01-21T16:14:15Z 2024-01-21T16:14:15Z 2022-01-11 1998-12 0022-2313 https://pubs.kist.re.kr/handle/201004/142654 Silicon nanocrystals have been synthesized in SiO2 matrix using Si ion implantation. Si ions were implanted into 300-nm-thick SiO2 films grown on crystalline Si at energies of 30-55 keV, and with doses of 5 x 10(15), 3 x 10(16), and 1 x 10(17) cm(-2). Implanted samples were subsequently annealed in an N-2 ambient at 500-1100 degrees C during various periods. Photoluminescence spectra for the sample implanted with 1 x 10(17) cm(-2) at 55 keV show that red luminescence (750 nm) related to Si-nanocrystals clearly increases with annealing temperature and time in intensity, and that weak orange luminescence (600 nm) is observed after annealing at low temperatures of 500 degrees C and 800 degrees C. The luminescence around 600 nm becomes very intense when a thin SiO2 sample is implanted at a substrate temperature of 400 degrees C with an energy of 30 keV and a low dose of 5 x 10(15) cm(-2). It vanishes after annealing at 800 degrees C for 30 min. We conclude that this luminescence observed around 600 nm is caused by some radiative defects formed in Si-implanted SiO2. (C) 1999 Elsevier Science B.V. All rights reserved. English ELSEVIER SCIENCE BV VISIBLE-LIGHT EMISSION SILICON NANOCRYSTALS THERMAL SIO2-FILMS ION-IMPLANTATION PHOTOLUMINESCENCE DIOXIDE FILMS Defect versus nanocrystal luminescence emitted from room temperature and hot-implanted SiO2 layers Article 10.1016/S0022-2313(98)00113-6 1 JOURNAL OF LUMINESCENCE, v.80, no.1-4, pp.285 - 289 JOURNAL OF LUMINESCENCE 80 1-4 285 289 scie scopus 000079227800049 2-s2.0-0345986839 Optics Optics Article; Proceedings Paper VISIBLE-LIGHT EMISSION SILICON NANOCRYSTALS THERMAL SIO2-FILMS ION-IMPLANTATION PHOTOLUMINESCENCE DIOXIDE FILMS Si nanocrystal hot-implantation SiO2 radiative defect