Im, S Oh, MS Joo, MH Kim, HB Kim, HK Song, JH 2024-01-21T16:31:21Z 2024-01-21T16:31:21Z 2021-09-03 1998-12 0021-4922 https://pubs.kist.re.kr/handle/201004/142710 Pseudomorphic metastable Ge0.06Si0.94 layers grown by molecular beam epitaxy (MBE) on Si (100) substrates were implanted at room temperature by 70 keV BF2 ions with two different doses of 3 x 10(13) and 2.5 x 10(14) cm(-2), or by 16 keV B ions with a dose of 4 x 10(14) cm(-2). The implanted samples were subsequently annealed at 800 and 900 degrees C for 30 min in a vacuum tube furnace. Observed by 2 MeV He-4 channeling spectrometry before annealing, only the sample implanted at a dose of 2.5 x 10(14) BS cm(-2) is amorphized from surface to a depth of about 90 nm. Crystalline degradation of post-annealed Ge0.06Si0.94 samples becomes pronounced as the dose increases. Even though the both samples implanted with 3 x 10(13) BF2 cm(-2) and 4 x 10(14) B cm(-2) initially show almost the same levels of radiation damage in the channeling spectra, the sample implanted at 3 x 10(13) BF2 cm(-2) only conserves the same crystalline quality as the as-grown GeSi after being annealed. It is concluded that such a low dose of 3 x 10(13) BF2 cm(-2) can be doped by implantation without causing radiation or strain-induced defects in the pseudomorphic GeSi. English JAPAN SOC APPLIED PHYSICS HETEROJUNCTION BIPOLAR-TRANSISTORS Effects of BF2 and B implantation-doping on crystalline degradation of pseudomorphic metastable Ge0.06Si0.94 Article 10.1143/JJAP.37.6977 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.37, no.12B, pp.6977 - 6980 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 37 12B 6977 6980 scie scopus 000078699200062 2-s2.0-19644384998 Physics, Applied Physics Article; Proceedings Paper HETEROJUNCTION BIPOLAR-TRANSISTORS ion implantation crystalline degradation doping GeSi leakage current