Plokhikh, A.A. Kim, C.-D. Joo, G.-T. Route, R.K. Feigelson, R.S. 2024-01-21T16:31:56Z 2024-01-21T16:31:56Z 2021-09-02 1998-12 0374-4884 https://pubs.kist.re.kr/handle/201004/142720 Domain structure of β-BaB2O4 (BBO) crystals were determined by chemical etching. It was found that crystals grown by the direct Czochralski method show mostly single-domain. Pyroelectric and piezoelectric properties of BBO were studied. Pyroelectric coefficient of BBO has positive sign and the value of the coefficient is p = (1.27 ± 0.08) × 10-5 C/m2K. Piezoelectric strain coefficients were: d33 = 0.15 × 10-11 C/N, d22 = 0.22 × 10-11 C/N and d31 = 0.049 × 10-11 C/N. Electrical conductivity of BBO was measured as a function of temperature in range 340-720°C. Arrhenius activation energy was 1.68 eV. English Domain structure and electrical properties of β-BaB2O4 single crystals grown by direct czochralski method Article 1 Journal of the Korean Physical Society, v.32, no.3 SUPPL., pp.S1231 - S1233 Journal of the Korean Physical Society 32 3 SUPPL. S1231 S1233 N scopus 2-s2.0-19944387009 Article β-BaB2O4