Choi, BH Hwang, SW Kim, IG Shin, HC Kim, Y Kim, EK 2024-01-21T16:32:09Z 2024-01-21T16:32:09Z 2021-09-03 1998-11-23 0003-6951 https://pubs.kist.re.kr/handle/201004/142723 A quantum-dot transistor based on silicon self-assembled quantum dots has been fabricated. The device shows staircases and oscillations in the drain current at room temperature. These data are interpreted as due to single electron tunneling through the dots located in the shortest current path between the source and the drain electrodes. The dot size calculated from the data is similar to 7 nm, which is consistent with the size of the self-assembled dots incorporated in the transistor. (C) 1998 American Institute of Physics. [S0003-6951(98)02147-0]. English AMER INST PHYSICS SINGLE-ELECTRON TRANSISTOR MEMORY Fabrication and room-temperature characterization of a silicon self-assembled quantum-dot transistor Article 10.1063/1.122695 1 APPLIED PHYSICS LETTERS, v.73, no.21, pp.3129 - 3131 APPLIED PHYSICS LETTERS 73 21 3129 3131 scie scopus 000077063800036 2-s2.0-2542490432 Physics, Applied Physics Article SINGLE-ELECTRON TRANSISTOR MEMORY Si