Kim, EK Kim, TG Son, CS Hwang, SM Kim, Y Park, YK Min, SK 2024-01-21T16:34:59Z 2024-01-21T16:34:59Z 2021-09-03 1998-11 0374-4884 https://pubs.kist.re.kr/handle/201004/142772 A well-defined selective GaAs epilayers were successfully grown on V-grooved GaAs substrates by single-stage atmospheric pressure metalorganic chemical vapor deposition (MOCVD) by supplying carbon tetrabromide (CBr4) and carbon tetrachloride (CCl4). Inside the V-grooves, the selectively grown GaAs epilayers exhibited a triangular and a round shape by supplying CBr4 and CCl4, respectively. By using this single-stage selective epitaxial growth technique, GaAs/AlGaAs buried channel stripe lasers with a GaAs active layer completely embedded in AlGaAs barriers were obtained. Room temperature operation was achieved at a wavelength of 869 nm with threshold currents as low as 43.5 mA (pulsed) and 59.9 mA (CW) for a 250 mu m-long uncoated cavity. English KOREAN PHYSICAL SOC CHEMICAL-VAPOR-DEPOSITION QUANTUM-WIRE STRUCTURES LATERAL GROWTH-RATE GAAS FABRICATION ARRAY GaAs/AlGaAs buried channel stripe lasers by single-stage MOCVD on V-grooved substrates Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.33, pp.S338 - S341 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 33 S338 S341 scie scopus 000077308900069 2-s2.0-0032271561 Physics, Multidisciplinary Physics Article; Proceedings Paper CHEMICAL-VAPOR-DEPOSITION QUANTUM-WIRE STRUCTURES LATERAL GROWTH-RATE GAAS FABRICATION ARRAY GaAs/AlGaAs GaAs/AlGaAs buried channel stripe lasers single-stage MOCVD V-grooved substrates