Jin, YG Lee, SY Nam, YW Lee, JK Park, D 2024-01-21T16:35:26Z 2024-01-21T16:35:26Z 2021-09-03 1998-11 0256-1115 https://pubs.kist.re.kr/handle/201004/142780 Triethylboron (TEB) and ammonia were employed as precursors in preparation of boron nitride thin films on Si(100) substrate by CVD. Operating parameters such as reactor pressure and feed rates of gases were varied to investigate their effects on deposition rate and film characteristics. Total gas pressure in the reactor was varied from near atmospheric to near 1 torr. Deposition temperature was in the range of 850-1,100 degrees C. Deposition rate increased with increase of partial pressure of TEE, but decreased with increase of total pressure in the reactor. Deposited films were examined with SEM, FTIR, XPS, AES and XRD. Films were BN of turbostratic structure and their texture and carbon content varied with deposition conditions. English KOREAN INST CHEM ENGINEERS NITRIDE A study of deposition rate and characterization of BN thin films prepared by CVD Article 10.1007/BF02698993 1 KOREAN JOURNAL OF CHEMICAL ENGINEERING, v.15, no.6, pp.652 - 657 KOREAN JOURNAL OF CHEMICAL ENGINEERING 15 6 652 657 scie scopus 000077593900014 2-s2.0-0032283778 Chemistry, Multidisciplinary Engineering, Chemical Chemistry Engineering Article NITRIDE CVD BN thin film deposition rate film characteristics reaction pressure