Choi, WK Choi, SC Jung, HJ Koh, SK Byun, DJ Kum, DW 2024-01-21T16:35:29Z 2024-01-21T16:35:29Z 2021-09-03 1998-11 0734-2101 https://pubs.kist.re.kr/handle/201004/142781 The surface of sapphire most widely used as a substrate for III-V nitride growth was modified by N-2(+) ion irradiation with ion-beam energies from 100 to 1000 eV. As the ion-beam energy increased from 100 to 500 eV, the root-mean-square roughness of the surface morphology decreased. However no significant change in surface roughness at energy higher-than 500 eV was observed. From the N Is x-ray photoelectron spectroscopy core-level spectra, no peak related to a nitrogen bond could be found in the samples irradiated with;ion energy below 500 eV. An AlON peak began to appear in the samples irradiated with 600-900 eV N-2(+) ions, and two peaks corresponding to AlON and AlN were distinctively observed in the sample irradiated at 1 keV. (C) 1998 American Vacuum Society, [S0734-2101(98)00406-0]. English AMER INST PHYSICS SUBSTRATE SURFACE GROWTH GAN LAYER Surface modification of alpha-Al2O3(0001) by N-2(+) ion irradiation Article 10.1116/1.581539 1 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, v.16, no.6, pp.3311 - 3313 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 16 6 3311 3313 scie scopus 000077023700023 2-s2.0-0001400123 Materials Science, Coatings & Films Physics, Applied Materials Science Physics Article SUBSTRATE SURFACE GROWTH GAN LAYER surface modification sapphire surface reactive ion beam irradiation