Han, JH Shin, MC Kang, SH Morris, JW 2024-01-21T16:42:44Z 2024-01-21T16:42:44Z 2021-09-03 1998-08-10 0003-6951 https://pubs.kist.re.kr/handle/201004/142906 This letter reports that electromigration lifetimes of Al-2Cu (wt. %) thin-film conducting lines increase by more than three times when the lines are optimally aged to facilitate finely dispersed Al2Cu precipitates in the interior of the grains. In contrast to other studies which did not report a beneficial aging effect for AI-Cu films, the present work substantiates the fact that proper control of Al2Cu precipitates improves resistance to electromigration failure. However, the benefit of aging the Al-2Cu lines investigated here was less pronounced and confined to a more narrow heat-treatment "window" than that previously found for the Al-2Cu-1Si lines. (C) 1998 American Institute of Physics. English AMER INST PHYSICS RELIABILITY Effects of precipitate distribution on electromigration in Al-Cu thin-film interconnects Article 10.1063/1.121993 1 APPLIED PHYSICS LETTERS, v.73, no.6, pp.762 - 764 APPLIED PHYSICS LETTERS 73 6 762 764 scie scopus 000075303400020 2-s2.0-0000243685 Physics, Applied Physics Article RELIABILITY electromigration Al thin-film Interconnect precipitate