Byun, D Jeong, J Kim, HJ Koh, SK Choi, WK Park, D Kum, DW 2024-01-21T16:42:53Z 2024-01-21T16:42:53Z 2021-09-03 1998-08-04 0040-6090 https://pubs.kist.re.kr/handle/201004/142908 Efficiency and lifetime of GaN based light emitting diodes and laser diodes can be improved by proper choice of substrate or deliberate modification of the substrate surface before deposition. Buffer growth or nitridation is the usual choices of surface modifications for GaN deposition to improve crystal duality and optical properties. It was our intention to study a possibility that a reactive ion beam (RIB) pretreatment of the sapphire substrate at room temperature could substitute the nitridation process at high temperature above 1000 degrees C. The optical property of GaN films deposited on the sapphire surfaces pretreated by the reactive ion beam has improved significantly. Current observations clearly demonstrates that the RIB pretreatment of the sapphire surface can be used to improve the GaN films grown by metalorganic chemical vapor deposition (MOCVD). (C) 1998 Elsevier Science S.A. All rights reserved. English ELSEVIER SCIENCE SA OPTICAL-PROPERTIES SUBSTRATE SURFACE BUFFER LAYER NITRIDATION DEVICES Reactive ion (N-2(+)) beam pretreatment of sapphire for GaN growth Article 10.1016/S0040-6090(98)00561-6 1 THIN SOLID FILMS, v.326, no.1-2, pp.151 - 153 THIN SOLID FILMS 326 1-2 151 153 scie scopus 000075693800020 2-s2.0-0032482846 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article OPTICAL-PROPERTIES SUBSTRATE SURFACE BUFFER LAYER NITRIDATION DEVICES reactive ion beam gallium nitride atomic force microscopy chemical vapor deposition