Yoon, TH Shin, DS Kim, DB Kim, JC Kim, SH 2024-01-21T16:44:35Z 2024-01-21T16:44:35Z 2021-09-03 1998-08 0021-4922 https://pubs.kist.re.kr/handle/201004/142937 We have shown theoretically that a semiconductor etalon exhibits optically bistable behavior at a lower input light intensity when the two mirrors as well as the spacer layer are nonlinear. English JAPAN J APPLIED PHYSICS Optical bistability in a semiconductor etalon with nonlinear integrated mirrors Article 10.1143/JJAP.37.4397 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.37, no.8, pp.4397 - 4400 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 37 8 4397 4400 scie scopus 000076313100034 2-s2.0-0032131024 Physics, Applied Physics Article optical bistability nonlinear etalon semiconductor etalon nonlinear layered structure quarter-wave mirror characteristic matrix method fixed-point iteration