Shin, DS Lee, HN Kim, YT Choi, IH Kim, BH 2024-01-21T16:44:42Z 2024-01-21T16:44:42Z 2021-09-03 1998-08 0021-4922 https://pubs.kist.re.kr/handle/201004/142939 Memory window and leakage current density of Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure have been investigated for non destructive read out memory. Coercive field that decisively affects on the memory window becomes greater by the interposition of the CeO2 insulator between SrBi2Ta2O9 and SiO2 and thus the memory window also increases with an electric field to the SrBi2Ta2O9. A typical value of memory window for PT/SrBi2Ta2O9 (140 nm)/CeO2/SiO2/Si is in the range of 0.5 - 3.0 V, which is high enough for the non destructive read out memory, at the applied voltage of 3 - 9 V. The leakage current density is remained at 3 x 10(-8) A/cm(2) until the applied voltage increases up to 10 V. English JAPAN J APPLIED PHYSICS FIELD-EFFECT TRANSISTOR THIN-FILMS SRBI2TA2O9 CAPACITOR Electrical properties of Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure for nondestructive readout memory Article 10.1143/JJAP.37.4373 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.37, no.8, pp.4373 - 4376 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 37 8 4373 4376 scie scopus 000076313100029 2-s2.0-0032131319 Physics, Applied Physics Article FIELD-EFFECT TRANSISTOR THIN-FILMS SRBI2TA2O9 CAPACITOR ferroelectric MFIS memory window SrBi2Ta2O9 CeO2 coercive field