Kim, TG Park, KH Hwang, SM Kim, Y Kim, EK Min, SK Leem, SJ Jeon, JI Park, JH Chang, WSC 2024-01-21T16:44:49Z 2024-01-21T16:44:49Z 2021-09-03 1998-08 0018-9197 https://pubs.kist.re.kr/handle/201004/142941 GaAs-AlGaAs V-grooved inner stripe (VIS) quantum-well wire (QWW) lasers grown by metalorganic chemical vapor deposition with different current blocking configurations, n-blocking on p-substrate (VIPS), p-n-p-n blocking on n-substrate (VI(PN)(n)S) and p-blocking on n-substrate (VINS) have been fabricated and characterized, The VIPS QWW lasers show the most stable characteristics with effective current confinement: one of the lasers shows fundamental transverse mode, lasing up to 5 mW/facet, typical threshold current of 39.9 mA at 818.5 mn, an external differential quantum efficiency of 24%/facet, and characteristic temperature of 92 K. The current tuning rate was almost linear at 0.031 nm/mA, and the temperature tuning rate was measured to be 0.14 nm/degrees C, Comparison of the light output versus current characteristics of the lasers with different current blocking configurations is presented here. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC TEMPERATURE-DEPENDENCE HETEROSTRUCTURE LASERS AUGER RECOMBINATION THRESHOLD CURRENT Performance of GaAs-AlGaAs V-grooved inner stripe quantum-well wire lasers with different current blocking configurations Article 1 IEEE JOURNAL OF QUANTUM ELECTRONICS, v.34, no.8, pp.1461 - 1468 IEEE JOURNAL OF QUANTUM ELECTRONICS 34 8 1461 1468 scie scopus 000074870700018 2-s2.0-0032139931 Engineering, Electrical & Electronic Quantum Science & Technology Optics Physics, Applied Engineering Physics Optics Article TEMPERATURE-DEPENDENCE HETEROSTRUCTURE LASERS AUGER RECOMBINATION THRESHOLD CURRENT epitaxial growth lasers quantum-well wire laser stimulated emission