Woo, DH Han, IK Choi, WJ Lee, S Kim, HJ Lee, JI Kim, SH Kang, KN Choi, SG Kim, YD Yoo, SD Aspnes, DE Rhee, SJ Woo, JC 2024-01-21T16:45:17Z 2024-01-21T16:45:17Z 2021-09-03 1998-08 0167-9317 https://pubs.kist.re.kr/handle/201004/142949 We present optical studies of a series of GaAs/AlAs short period superlattices grown by molecular beam epitaxy. The structural properties were examined by X-ray diffraction measurements. The quantum confinement of the electronic and the vibronic states were observed in the low temperature photoluminescence and Raman scattering experiments, respectively. Spectroscopic ellipsometric (SE) measurements were also performed. We found a new structure at the lower E-2 peak, which is the best resolution of the E-2 structure in these SLs so far obtained by SE. (C) 1998 Elsevier Science B.V. All rights reserved. English ELSEVIER SCIENCE BV GAAS-ALAS TRANSITIONS ALXGA1-XAS Optical characterization of GaAs/AlAs short period superlattices Article 10.1016/S0167-9317(98)00173-7 1 MICROELECTRONIC ENGINEERING, v.43-4, pp.265 - 270 MICROELECTRONIC ENGINEERING 43-4 265 270 scie scopus 000075867000039 2-s2.0-0346940341 Engineering, Electrical & Electronic Nanoscience & Nanotechnology Optics Physics, Applied Engineering Science & Technology - Other Topics Optics Physics Article; Proceedings Paper GAAS-ALAS TRANSITIONS ALXGA1-XAS MBE