Choi, WJ Han, SM Shah, SI Choi, SG Woo, DH Lee, S Kim, SH Lee, JI Kang, KN Cho, J 2024-01-21T17:01:33Z 2024-01-21T17:01:33Z 2021-09-03 1998-07 1077-260X https://pubs.kist.re.kr/handle/201004/142987 Dielectric-cap quantum-well disordering of GaAs-AlGaAs multiple-quantum-well (MQW) structure was carried out using SiNx capping layer grown by plasma enhanced chemical raper deposition. There was a dependence of quantum-well disordering (QWD) on the hydrogen content in the SiNx capping layer, which was varied by changing the NH3 how rate during the film growth, The degree of QWD increased with increasing of hydrogen content in the SiNx capping layer, The degree of QWD with SiNx capping laver grown at higher NH3 how rate was comparable to that with a 300-mn-thick SiO2 capping layer at the same rapid thermal annealing condition. This result implies the possibility of obtaining spatially selective disordered MQW structure using SiNx capping layers grown at different NH3 how rates. The effect of different SiNx cappings layers on QWD was characterized semiquantitatively by introducing relative vacancy density. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC SILICON-NITRIDE OUT-DIFFUSION FILMS Dependence of dielectric-cap quantum-well disordering of GaAs-AlGaAs quantum-well structure on the hydrogen content in SiNx capping layer Article 10.1109/2944.720472 1 IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, v.4, no.4, pp.624 - 628 IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 4 4 624 628 scie scopus 000076177400006 2-s2.0-0032119765 Engineering, Electrical & Electronic Quantum Science & Technology Optics Physics, Applied Engineering Physics Optics Article SILICON-NITRIDE OUT-DIFFUSION FILMS hydrogen content in capping layer quantum-well disordering semiconductor process