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<dcvalue element="contributor" qualifier="author">Heo,&#x20;NH</dcvalue>
<dcvalue element="contributor" qualifier="author">Chai,&#x20;KH</dcvalue>
<dcvalue element="contributor" qualifier="author">Na,&#x20;JG</dcvalue>
<dcvalue element="contributor" qualifier="author">Woo,&#x20;JS</dcvalue>
<dcvalue element="date" qualifier="accessioned">2024-01-21T17:02:35Z</dcvalue>
<dcvalue element="date" qualifier="available">2024-01-21T17:02:35Z</dcvalue>
<dcvalue element="date" qualifier="created">2022-01-10</dcvalue>
<dcvalue element="date" qualifier="issued">1998-06-01</dcvalue>
<dcvalue element="identifier" qualifier="issn">0021-8979</dcvalue>
<dcvalue element="identifier" qualifier="uri">https:&#x2F;&#x2F;pubs.kist.re.kr&#x2F;handle&#x2F;201004&#x2F;143005</dcvalue>
<dcvalue element="description" qualifier="abstract">A&#x20;correlation&#x20;between&#x20;magnetic&#x20;induction&#x20;and&#x20;surface&#x20;phenomena&#x20;has&#x20;been&#x20;investigated&#x20;in&#x20;a&#x20;3%&#x20;Si&#x20;steel&#x20;0.1&#x20;mm&#x20;thick.&#x20;During&#x20;final&#x20;annealing&#x20;at&#x20;several&#x20;temperatures,&#x20;the&#x20;saturation&#x20;level&#x20;in&#x20;magnetic&#x20;induction&#x20;increased&#x20;with&#x20;increasing&#x20;final&#x20;annealing&#x20;temperature,&#x20;and&#x20;reached&#x20;1.93&#x20;T&#x20;after&#x20;final&#x20;annealing&#x20;at&#x20;1300&#x20;degrees&#x20;C&#x20;for&#x20;3.9&#x20;ks.&#x20;This&#x20;is&#x20;attributed&#x20;to&#x20;the&#x20;formation&#x20;of&#x20;complete&#x20;(110)[001]&#x20;Goss&#x20;texture.&#x20;During&#x20;final&#x20;annealing,&#x20;the&#x20;magnetic&#x20;induction&#x20;of&#x20;the&#x20;thin-gauged&#x20;3%&#x20;Si&#x20;strip&#x20;was&#x20;inversely&#x20;proportional&#x20;to&#x20;the&#x20;sulfur&#x20;concentration&#x20;on&#x20;the&#x20;surface.&#x20;The&#x20;surface&#x20;segregation&#x20;of&#x20;sulfur&#x20;occurred&#x20;after&#x20;a&#x20;critical&#x20;time&#x20;the&#x20;silicon&#x20;concentration&#x20;on&#x20;the&#x20;surface&#x20;dropped&#x20;to&#x20;the&#x20;level&#x20;obtained&#x20;from&#x20;the&#x20;ct-iron&#x20;matrix&#x20;containing&#x20;3%&#x20;Si.&#x20;The&#x20;drop&#x20;in&#x20;silicon&#x20;level&#x20;on&#x20;the&#x20;thin-gauged&#x20;strip&#x20;surface&#x20;is&#x20;due&#x20;to&#x20;the&#x20;volatile&#x20;silicon&#x20;monoxide,&#x20;which&#x20;arises&#x20;from&#x20;the&#x20;reaction&#x20;between&#x20;the&#x20;silicon&#x20;dioxide&#x20;and&#x20;the&#x20;silicon&#x20;segregated,&#x20;or&#x20;between&#x20;the&#x20;silicon&#x20;segregated&#x20;and&#x20;the&#x20;oxygen&#x20;from&#x20;the&#x20;high&#x20;vacuum&#x20;condition.&#x20;(C)&#x20;1998&#x20;American&#x20;Institute&#x20;of&#x20;Physics.&#x20;[S0021-8979(98)41511-1].</dcvalue>
<dcvalue element="language" qualifier="none">English</dcvalue>
<dcvalue element="publisher" qualifier="none">AMER&#x20;INST&#x20;PHYSICS</dcvalue>
<dcvalue element="subject" qualifier="none">BRITTLE-DUCTILE&#x20;TRANSITION</dcvalue>
<dcvalue element="subject" qualifier="none">OXIDATION</dcvalue>
<dcvalue element="subject" qualifier="none">ALLOY</dcvalue>
<dcvalue element="subject" qualifier="none">KINETICS</dcvalue>
<dcvalue element="subject" qualifier="none">SILICON</dcvalue>
<dcvalue element="title" qualifier="none">Magnetic&#x20;induction&#x20;and&#x20;surface&#x20;segregation&#x20;in&#x20;thin-gauged&#x20;3%&#x20;Si&#x20;steel</dcvalue>
<dcvalue element="type" qualifier="none">Article</dcvalue>
<dcvalue element="identifier" qualifier="doi">10.1063&#x2F;1.367924</dcvalue>
<dcvalue element="description" qualifier="journalClass">1</dcvalue>
<dcvalue element="identifier" qualifier="bibliographicCitation">JOURNAL&#x20;OF&#x20;APPLIED&#x20;PHYSICS,&#x20;v.83,&#x20;no.11,&#x20;pp.6480&#x20;-&#x20;6482</dcvalue>
<dcvalue element="citation" qualifier="title">JOURNAL&#x20;OF&#x20;APPLIED&#x20;PHYSICS</dcvalue>
<dcvalue element="citation" qualifier="volume">83</dcvalue>
<dcvalue element="citation" qualifier="number">11</dcvalue>
<dcvalue element="citation" qualifier="startPage">6480</dcvalue>
<dcvalue element="citation" qualifier="endPage">6482</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scie</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scopus</dcvalue>
<dcvalue element="identifier" qualifier="wosid">000077795500085</dcvalue>
<dcvalue element="identifier" qualifier="scopusid">2-s2.0-0000845830</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Physics,&#x20;Applied</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Physics</dcvalue>
<dcvalue element="type" qualifier="docType">Article;&#x20;Proceedings&#x20;Paper</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">BRITTLE-DUCTILE&#x20;TRANSITION</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">OXIDATION</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">ALLOY</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">KINETICS</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">SILICON</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">3%&#x20;Si-Fe&#x20;sheets</dcvalue>
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