Kim, HB Cho, MH Whangbo, SW Whang, CN Choi, SC Choi, WK Song, JH Kim, SO 2024-01-21T17:06:08Z 2024-01-21T17:06:08Z 2021-09-03 1998-05-18 0040-6090 https://pubs.kist.re.kr/handle/201004/143065 The heteroepitaxially grown yttrium oxide layer by an ionized cluster beam (ICB) on a Si(100) substrate was investigated by Rutherford backscattering spectrometry (RBS)/channeling. The channeling minimum value (chi(min)) of the Y2O3 layer on Si(100) is 0.28, and this is the smallest value among those reported. From the channeling polar plots, it is found that Y2O3 film grown on Si(100) oriented with (110) direction and has a double domain structure. The (110) axis of Y2O3 layer is exactly parallel to the [100] axis of the Si substrate. It is also observed that the interface region of Y2O3 film has more crystalline defects than the surface region. (C) 1998 Elsevier Science S.A. All rights reserved. English ELSEVIER SCIENCE SA THIN-FILMS DEPOSITION SUBSTRATE SILICON RBS/channeling studies on the heteroepitaxially grown Y2O3 film on Si(100) Article 10.1016/S0040-6090(98)00364-2 1 THIN SOLID FILMS, v.320, no.2, pp.169 - 172 THIN SOLID FILMS 320 2 169 172 scie scopus 000074624900004 2-s2.0-0032072348 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Letter THIN-FILMS DEPOSITION SUBSTRATE SILICON heteroepitaxially grown crystalline defects double domain structure ytrrium oxide Si substrate