Taylor, SJ Yamaguchi, M Yamaguchi, T Watanabe, S Ando, K Matsuda, S Hisamatsu, T Kim, SI 2024-01-21T17:06:39Z 2024-01-21T17:06:39Z 2021-09-03 1998-05-01 0021-8979 https://pubs.kist.re.kr/handle/201004/143074 We have carried out an investigation of n(+)-p-p(+) silicon diodes after irradiation with 1 MeV electrons and 10 MeV protons and subsequently after annealing. The effects upon the material and device parameters of samples irradiated with different particles are compared by expressing the particle fluence in terms of an effective absorbed dose of 1 MeV electrons. Although the spectrum of defects (observed by deep-level transient spectroscopy) introduced by 1 MeV electrons and 10 MeV protons was slightly different, the total defect introduction rate per effective 1 MeV electron dose was similar, as was the effect upon the device parameters. After irradiation with high fluences of electrons or protons, the effective carrier concentration in the base of the diodes was reduced dramatically, an effect referred to as "carrier removal." The effects of carrier removal upon the device parameters, in particular, the series resistance and saturation current, are discussed in detail. In addition, the relative importance of different radiation-induced defects is compared. (C) 1998 American Institute of Physics. English AMER INST PHYSICS SOLAR-CELLS SEMICONDUCTORS DEGRADATION DEFECT Comparison of the effects of electron and proton irradiation on n(+)-p-p(+) silicon diodes Article 10.1063/1.367246 1 JOURNAL OF APPLIED PHYSICS, v.83, no.9, pp.4620 - 4627 JOURNAL OF APPLIED PHYSICS 83 9 4620 4627 scie scopus 000073523900010 2-s2.0-0032075083 Physics, Applied Physics Article SOLAR-CELLS SEMICONDUCTORS DEGRADATION DEFECT silicon diode proton irradiation carrier removal