Park, YK Kim, SI Kim, Y Kim, EK Min, SK Son, CS Choi, IH 2024-01-21T17:08:05Z 2024-01-21T17:08:05Z 2021-09-03 1998-05 0374-4884 https://pubs.kist.re.kr/handle/201004/143098 A selectively confined V-shaped carbon-tetrachloride-doped GaAs epilayer grown inside a U-groove by one-step growth has been successfully fabricated on a patterned GaAs substrate by atmospheric pressure metalorganic chemical vapor deposition. A dramatic lateral growth enhancement was obtained by supplying carbon tetrachloride and allowed selective epitaxy. This one-step maskless selective epitaxy does not require any masking material. The selective epitaxy has also been demonstated in a U-shaped groove array. English KOREAN PHYSICAL SOC QUANTUM-WIRE STRUCTURES FABRICATION REGROWTH LAYER ARRAY DOTS Selective epitaxy of carbon-tetrachloride-doped GaAs grown by metalorganic chemical vapor deposition Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.32, no.5, pp.704 - 706 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 32 5 704 706 scie scopus 000073671200016 2-s2.0-0032346402 Physics, Multidisciplinary Physics Article QUANTUM-WIRE STRUCTURES FABRICATION REGROWTH LAYER ARRAY DOTS Selective Epitaxy