Kim, YS Kim, DJ Kwak, SK Kim, EK Min, SK Jung, DG 2024-01-21T17:09:18Z 2024-01-21T17:09:18Z 2021-09-03 1998-04-15 https://pubs.kist.re.kr/handle/201004/143119 Selective chemical vapor deposition of copper on TiN in the presence of borophosphosilicate glass (BPSG) was achieved by RF N-2 plasma pretreatment. Without N-2 plasma pretreatment, the copper films deposited on BPSG as well as TiN at the deposition temperature of 170 degrees C, while N-2 plasma treatment prior to copper deposition led to the significant suppression of the copper nucleation on BPSG. As the plasma pretreatment temperature was increased, the suppression of the copper nucleation on BPSG was increased. The results of time-of-Right secondary ion mass spectroscopy (TOF-SIMS) indicated that N-2 plasma treatment decreased the content of hydroxyl groups on BPSG surface, suggesting that the reduction of the surface hydroxyl groups contributed to the selective deposition of copper on TiN/BPSG substrates. English JAPAN J APPLIED PHYSICS GROWTH Enhancement of selective chemical vapor deposition of copper by nitrogen plasma pretreatment Article 10.1143/JJAP.37.L462 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.37, no.4B, pp.L462 - L464 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 37 4B L462 L464 scopus 000074941100012 2-s2.0-0032049117 Physics, Applied Physics Article GROWTH copper MOCVD interconnects selective deposition N-2 plasma surface modification TOF-SIMS