Cho, SH Kim, EK Min, SK 2024-01-21T17:11:33Z 2024-01-21T17:11:33Z 2021-09-03 1998-04 0374-4884 https://pubs.kist.re.kr/handle/201004/143158 The effect of the band gap narrowing induced by the thermal perturbation in carbon-doped GaAs epilayers was determined by using photoluminescence (PL) spectroscopy. The GaAs epilayers were grown on semi-insulating GaAs substrates by atmospheric-pressure metalorganic chemical vapor deposition. The PL measurements were performed in a closed-cycle refrigerator in the temperature range from 16 to 250 K. The measured peak energy and band gap of the PL spectrum shift to lower energy, and the full width at half maximum (FWRM) increases with increasing temperature. The thermal shifts of the peak energy and the band gap are well described by the Varshni equation. The results suggest that the effective band gap at T=0 K can be inferred from measurements of the hole concentration. The change in the FWHM of the PL spectrum as a function of temperature T can be expressed by Delta f(T) = f(T) - f(20 K) similar to T-1/2. English KOREAN PHYSICAL SOC GAP SEMICONDUCTORS TEMPERATURE LUMINESCENCE SPECTROSCOPY Photoluminescence in carbon-doped GaAs grown by atmospheric-pressure metalorganic chemical vapor deposition Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.32, no.4, pp.584 - 587 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 32 4 584 587 scie scopus 000073191800028 Physics, Multidisciplinary Physics Article GAP SEMICONDUCTORS TEMPERATURE LUMINESCENCE SPECTROSCOPY GaAs epilayer