Son, CS Park, YK Kim, SI Kim, Y Kim, EK Min, SK Choi, IH 2024-01-21T17:11:56Z 2024-01-21T17:11:56Z 2021-09-03 1998-04 0021-4922 https://pubs.kist.re.kr/handle/201004/143165 Maskless one-step selective CCl4-doped GaAs epilayers have been grown on patterned GaAs substrates by atmospheric pressure metalorganic chemical vapor deposition. The growth technique has potential for realizing a well-defined quantum confinement structure and lateral structure device. Round shaped CCl4-doped GaAs epilayer was selectively grown inside a U-groove and on the sidewalls of a mesa with a significant lateral growth rate enhancement, whereas no growth was observed outside U-groove and on top of the mesa. English JAPAN J APPLIED PHYSICS QUANTUM-WIRE STRUCTURES PHASE EPITAXY FABRICATION DOTS INGAAS CBR4 REGROWTH STATES LASERS LAYER Maskless selective epitaxial growth on patterned GaAs substrates by metalorganic chemical vapor deposition Article 10.1143/JJAP.37.1701 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.37, no.4A, pp.1701 - 1703 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 37 4A 1701 1703 scie scopus 000076042900009 2-s2.0-0032046068 Physics, Applied Physics Article QUANTUM-WIRE STRUCTURES PHASE EPITAXY FABRICATION DOTS INGAAS CBR4 REGROWTH STATES LASERS LAYER selective epitaxy metalorganic chemical vapor deposition GaAs carbon tetrachloride