Kim, YT Lee, CW Kim, DJ 2024-01-21T17:12:30Z 2024-01-21T17:12:30Z 2021-09-03 1998-03-23 0003-6951 https://pubs.kist.re.kr/handle/201004/143174 We have achieved the highest barrier height (0.90 eV) with a Schottky contact scheme of W-B-N/GaAs after rapid thermal annealing (RTA) at 700 degrees C, and even after the RTA at 900 degrees C, its barrier height (0.77 eV) is relatively higher than those of W (0.55 eV) and W-N/GaAs Schottky contacts (0.68 eV). Deep level transient spectroscopy and carrier density profile measurements show that the higher barrier height and lower leakage current of the W-B-N/GaAs diode are due to the W-B-N film that suppresses changes of the surface carrier and EL2 trap concentrations after the RTA. (C) 1998 American Institute of Physics. English AMER INST PHYSICS Electrical properties of a W-B-N Schottky contact to GaAs Article 10.1063/1.121041 1 APPLIED PHYSICS LETTERS, v.72, no.12, pp.1507 - 1509 APPLIED PHYSICS LETTERS 72 12 1507 1509 scie scopus 000072649900034 2-s2.0-21544476456 Physics, Applied Physics Article Shottky contact